Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy

被引：0

作者：

Yang, JM

Thornton, TJ

Goodnick, SM

Kozicki, M

Lyding, J

机构：

[1] Arizona State Univ, Dept Elect Engn, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

SOI MOSFETs; electron transport; device modeling;

D O I：

10.1016/S0921-4526(01)01404-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hot-carrier degradation in deep sub-micron MOSFETs can lead to shifts in the threshold voltage. reduction in effective mobility and transconductance, and reduced device reliability. Voltage and current stress measurements are often used to determine the hot-carrier degradation mechanisms. However, direct measurements of the hot-carrier distribution are difficult to make because the inversion layer in a conventional MOSFET is buried beneath the MOS gate material. In this paper, we describe a novel buried-channel silicon-on-insulator MOSFET that is suitable for hot-electron spectroscopy using a scanning-probe microscope. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：354 / 357

页数：4