InGaAs/InAlAs Multi-Quantum Well light modulator and detector

被引：0
|
作者：
Maloney, P. G. [1 ]
Koch, F. E. [2 ]
Alavi, K. [1 ,3 ]
Pellegrino, J.
Hongsinatip, T. [4 ]
Carothers, D. [4 ]
Winn, M. [4 ]
机构：
[1] Night Vis & Elect Sensors Directorate, Ft Belvoir, VA 22060 USA
[2] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90024 USA
[3] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
[4] BAE SYST, Nashua, NH USA
来源：
ACTIVE AND PASSIVE OPTICAL COMPONENTS FOR COMMUNICATIONS VI | 2006年 / 6389卷
关键词：
D O I：
10.1117/12.684686
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Multi-Quantum Well (MQW) modulators have been demonstrated with a high contrast ratio of of 5:1 in an InGaAs/InAlAs p-i-n structure at 1.55 mu m. Additionally, it was found that modulators that exploit the optical properties of resonant cavities can achieve contrast ratios at least three times larger than those that don't. The devices fabricated were measured to have modulation rates of greater than 30 MHz. Lastly, quantum efficiencies and responsivity measurements show that modulator would be able to detect incident light and coupled with electronics would "know" when to modulate.
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页数：5
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