Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion implantation Doping

被引：19

作者：

Nanjo, Takuma ^{[1
]}

Suita, Muneyoshi ^{[1
]}

Oishi, Toshiyuki ^{[2
]}

Abe, Yuji ^{[1
]}

Yagyu, Eiji ^{[1
]}

Yoshiara, Kiichi ^{[1
]}

Tokuda, Yasunori ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan

[2] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kanagawa 2478501, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

关键词：

HFETS;

D O I：

10.1143/APEX.2.031003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Although a thin AlN spacer layer between the AlGaN barrier and GaN channel layers effectively increases electron mobility and sheet carrier concentration in a two-dimensional electron gas, the very wide bandgap AlN makes ohmic contacts difficult to form. We overcame this problem using Si ion implantation to attain contact resistance below 2.5 x 10(-6) Omega cm(2). Samples without ion implantation had poor ohmic properties. Inserting the thin AlN spacer layer dramatically improved the drain current of high-electron mobility transistors. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.02.031003

引用

页数：3

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