Electrochemical Polishing of p-type 4H SiC

被引：3

作者：

Ke, Y. ^{[1
]}

Yan, F. ^{[1
]}

Devaty, R. P. ^{[1
]}

Choyke, W. J. ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

electrochemical; etching; polish; surface; roughness; processing; SILICON-CARBIDE; ETCH RATES; MEMS;

D O I：

10.4028/www.scientific.net/MSF.615-617.601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article discusses the electrochemical polishing of silicon-face p-type 4H SiC using diluted aqueous HF Solution. Etchings oil the silicon and carbon faces of SiC samples arc performed and compared. The experimental results Show that the RMS surface roughness of the electrochemically polished Si-face could be as low as about 2 nm. Carbon-face electrochemical polishing gives a rougher surface. Therefore, silicon-face 4H SiC is a better candidate for MEMS processing. The underlying mechanism is also discussed.

引用

页码：601 / 604

页数：4

共 12 条

[1] Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms [J].

Chabert, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1339-1345

[2] Micromachining of p-type 6H-SiC by electrochemical etching [J].

Chang, WH .

SENSORS AND ACTUATORS A-PHYSICAL, 2004, 112 (01) :36-43

[3] Comparative columnar porous etching studies on n-type 6H SiC crystalline faces [J].

Ke, Y. ;

Devaty, R. P. ;

Choyke, W. J. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2008, 245 (07) :1396-1403

[4] Self-ordered nanocolumnar pore formation in the photoelectrochemical etching of 6H SiC [J].

Ke, Y. ;

Devaty, R. P. ;

Choyke, W. J. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (07) :K24-K27

[5]

KE Y, 2008, POROUS SILICON CARBI

[6] High etch rates of SiC in magnetron enhanced SF6 plasmas [J].

McLane, GF ;

Flemish, JR .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3755-3757

[7] SiC MEMS: opportunities and challenges for applications in harsh environments [J].

Mehregany, M ;

Zorman, CA .

THIN SOLID FILMS, 1999, 355 :518-524

[8] SIC FOR SENSORS AND HIGH-TEMPERATURE ELECTRONICS [J].

MULLER, G ;

KROTZ, G .

SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) :259-268

[9] Silicon carbide as a new MEMS technology [J].

Sarro, PM .

SENSORS AND ACTUATORS A-PHYSICAL, 2000, 82 (1-3) :210-218

[10] Photoelectrochemical etching of n-type 4H silicon carbide [J].

Shishkin, Y ;

Choyke, WJ ;

Devaty, RP .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) :2311-2322

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