Effect of substrate surface on the structure and electronic properties of cubic boron nitride films

被引:8
|
作者
Zhou, X. T.
Sham, T. K. [1 ]
Chan, C. Y.
Zhang, W. J.
Bello, I.
Lee, S. T.
Hofsaess, H.
机构
[1] Univ Western Ontario, Dept Chem, London, ON N6A 5B7, Canada
[2] COSDAF, Kowloon, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[4] Univ Gottingen, Inst Phys 2, D-37077 Gottingen, Germany
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1063/1.2213349
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cubic boron nitride (c-BN) films were prepared by mass-selected ion beam deposition (MSIBD) technique. The effects of substrate surface roughness were investigated by boron and nitrogen k-edge x-ray absorption near-edge structure, x-ray diffraction, and atomic force microscopy. All the films are a mixture of nanocrystalline sp(3)-bonded c-BN and sp(2)-bonded BN phases. The substrate with a rough surface causes a decrease of the c-BN phase content of the film on it. A significant large lattice contraction of the c-BN crystallites in the films, relative to the bulk, is observed. It is also found that the electronic structure of the nanocrystalline c-BN films by MSIBD technique is somewhat different from that of microcrystalline c-BN/h-BN references. We attribute the effect of the nature of the substrate on the morphology and structure of the c-BN films to the orientation of sp(2)-bonded graphitic BN basal plane on the top surface of the films during their growth, and the lattice contraction and energy band structure modification of c-BN films to the large compressive stress, respectively. (c) 2006 American Institute of Physics.
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页数:7
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