Photovoltaic and phototransient interface states properties of nanocomposite Fe3O4-graphene/n-Si/Al photodiode

被引：7

作者：

Alahmed, Z. A. ^{[1
]}

Phan, D. -T. ^{[2
]}

Chung, G. -S. ^{[2
]}

Yakuphanoglu, F. ^{[3
]}

机构：

[1] King Saud Univ, Dept Phys & Astron, Coll Sci, Riyadh 11451, Saudi Arabia

[2] Univ Ulsan, Sch Elect Engn, Ulsan 680749, South Korea

[3] Firat Univ, Dept Phys, Fac Sci, TR-23119 Elazig, Turkey

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 63卷

关键词：

Graphene; Photovoltaic device; Diode; THIN-FILMS; GRAPHENE; DIODE;

D O I：

10.1016/j.spmi.2013.07.012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A photodiode based on Fe3O4-graphene/n-Si/Al diode was fabricated. The electrical and capacitance properties of the diode were investigated by transient current and capacitance measurements. Ag/Fe3O4-graphene/n-Si photovoltaic device gives I-sc of 0.111 mA and V-oc of 375 mV under 1.5 A.M. The maximum electrical power P-max value of the device was found to be 7.567 mu V. This suggests that the studied photovoltaic device can be used as a microvoltage generator. The capacitance of the device increases with illumination. This indicates that the device exhibits a photocapacitance behavior. This behavior was analyzed by transient photocapacitance measurements. The transient interface states density plots of the diode were obtained. The photocapacitance mechanism was explained with the change in the interface states. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：36 / 46

页数：11

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