Thermal diffusion of antimony into nanostructured porous silicon

The thermal diffusion of Sb was carried out from Sb-doped silicate glass into porous silicon (PS) layers. The depth profiles of diffused Sb in PS layers were fitted to complementary error function curves in order to estimate diffusion coefficients. It was found that diffusion coefficients of Sb in PS were larger and had lower activation energy than those of Sb in hydrogenated amorphous silicon (a-Si:H) for the temperature range investigated. The experimental results are discussed in relation to the diffusion mechanisms in a-Si:H.