Ohmic Contact Properties Depending on AlGaN Layer Thickness for AlGaN/GaN High Electron Mobility Transistor Structures

被引：8

作者：

Takei, Yusuke ^{[1
]}

Okamoto, Mari ^{[1
]}

Saito, Wataru ^{[2
]}

Tsutsui, Kazuo ^{[1
]}

Kakushima, Kuniyuki ^{[1
]}

Wakabayashi, Hitoshi ^{[1
]}

Kataoka, Yoshinori ^{[3
]}

Iwai, Hiroshi ^{[3
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Appl Phys, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan

[2] Toshiba Corp Semicond & Storage Prod Co, Komukai Toshiba Cho, Saiwai Ku, Kawasaki, 2128583, Japan

[3] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, 2268502, Japan

来源：

WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15 | 2014年 / 61卷 / 04期

关键词：

D O I：

10.1149/06104.0265ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Mo/Al/Ti or TiN/TiSi2 ohmic contacts were fabricated on AlGaN/GaN HEMT structures having various thicknesses of AlGaN layers. Optimum thicknesses depending on annealing temperature were found, which should be correlated with the contact formation mechanism.

引用

页码：265 / 270

页数：6

共 5 条

[1] Growth and applications of Group III nitrides [J].