Strong ultraviolet and green emissions at room temperature from annealed ZnO thin films

被引:31
作者
Agyeman, O
Xu, CN [1 ]
Shi, WS
Zheng, XG
Suzuki, M
机构
[1] Natl Inst Adv Ind Sci & Technol, Tosu, Saga 8410052, Japan
[2] Saga Univ, Dept Phys, Saga 8408502, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2A期
关键词
ZnO; photoluminescence; ultraviolet; annealing; thin film; crystallinity;
D O I
10.1143/JJAP.41.666
中图分类号
O59 [应用物理学];
学科分类号
摘要
Undoped ZnO thin films were grown by rf magnetron sputtering on quartz-glass substrates and thermally annealed under various conditions such as in vacuum, reducing gas (5% H-2 diluted in Ar), oxygen and argon ambient, up to 1100 degreesC. We observed a strong excitonic (UV) emission peak around 3.26 eV, when the films were annealed in the reducing ambient whilst the films annealed in argon and oxygen showed strong deep-level emission peaks. The dependence of the UV and visible emissions on the film crystallinity and annealing is discussed.
引用
收藏
页码:666 / 669
页数:4
相关论文
共 20 条
  • [1] Preparation and characteristics of ZnO thin films deposited on glass substrates
    Agyeman, O
    Xu, CN
    Liu, Y
    Akiyama, M
    Zheng, XG
    Suzuki, M
    Harada, T
    [J]. ASIAN CERAMIC SCIENCE FOR ELECTRONICS I, 2002, 214-2 : 193 - 197
  • [2] Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE
    Bagnall, DM
    Chen, YF
    Shen, MY
    Zhu, Z
    Goto, T
    Yao, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 605 - 609
  • [3] LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE
    BETHKE, S
    PAN, H
    WESSELS, BW
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 138 - 140
  • [4] SURFACE EFFECTS ON LOW-ENERGY CATHODOLUMINESCENCE OF ZINC-OXIDE
    BYLANDER, EG
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1188 - 1195
  • [5] Microlaser made of disordered media
    Cao, H
    Xu, JY
    Seelig, EW
    Chang, RPH
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (21) : 2997 - 2999
  • [6] Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates
    Chen, YF
    Hong, SK
    Ko, HJ
    Nakajima, M
    Yao, T
    Segawa, Y
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (02) : 245 - 247
  • [7] LUMINESCENT TRANSITIONS ASSOCIATED WITH DIVALENT COPPER IMPURITIES AND GREEN EMISSION FROM SEMICONDUCTING ZINC OXIDE
    DINGLE, R
    [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 579 - &
  • [8] HAASE M, 1988, J PHYS CHEM-US, V92, P630
  • [9] ZUR GRUNEN LUMINESZENZ DES ZINKOXYDS .I. THERMOLUMINESZENZ
    HAHN, D
    NINK, R
    [J]. PHYSIK DER KONDENSITERTEN MATERIE, 1965, 3 (04): : 311 - +
  • [10] ELECTRON SPIN RESONANCE STUDIES OF DONORS AND ACCEPTORS IN ZNO
    KASAI, PH
    [J]. PHYSICAL REVIEW, 1963, 130 (03): : 989 - &