Influence of Mn doping on structural, optical and photoluminescence properties of Cd0.98Co0.02S thin films by chemical bath deposition method

被引：6
作者：
Hemathangam, S. [1 ]
Thanapathy, G. [2 ]
Muthukumaran, S. [3 ]
机构：
[1] Dharmapuram Adhinam Arts Coll, Dept Phys, Mayiladuthurai 609001, Tamil Nadu, India
[2] Poompuhar Coll, Dept Phys, Melaiyur 609107, Tamil Nadu, India
[3] Govt Arts Coll, Res Dept Phys, Madurai 625106, Tamil Nadu, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 02期
关键词：
Cadmium compounds - Deposition - Light - Manganese - Semiconductor doping - X ray diffraction - II-VI semiconductors - Cobalt compounds - Solar energy - Light absorption - Thin films - Sulfur compounds;
D O I：
10.1007/s10854-015-3955-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cd0.98Co0.02S and Mn-doped Cd0.98Co0.02S thin films have been successfully deposited on glass slides using aqueous ammonia solution at pH = 9.5 by chemical bath deposition method. X-ray diffraction pattern showed the cubic phase of the deposited films which was not affected by Mn-doping. Reduced crystallite size and decrease of interplanar distance confirmed the proper substation of Mn2+ into Cd-Co-S. Microstructure revealed that the spherical like structure of Cd0.98Co0.02S is changed into more compact plate like structure by Mn-doping. The enhanced visible light absorption by Mn doping proved that Mn-doping is an effective way to utilize the solar energy and enhance its photocatalytic activity under visible light. Infra red showed the shift of wave number from 597 cm(-1) (Cd0.98Co0.02S) to 641 cm(-1) (Co0.97Co0.02Mn0.01S) corresponding to Cd-S bond which confirmed the lower crystallite size. The observed blue emission band attributed to inter-band radiation combination of photo-generated electrons and holes and the change in its intensity and peak position were explained by recombination centers and impurity induced defect states.
引用
收藏
页码：1791 / 1798
页数：8
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