Circuit design techniques for a first-generation Cell Broadband Engine processor

被引:9
|
作者
Warnock, James [1 ]
Wendel, Dieter
Aipperspach, Tony
Behnen, Erwin
Cordes, Robert A.
Dhong, Sang H.
Hirairi, Koji
Murakami, Hiroaki
Onishi, Shohji
Pham, Dac C.
Pille, Jurgen
Posluszny, Stephen D.
Takahashi, Osamu
Wen, Huajun
机构
[1] IBM Entwicklung GmbH, D-71032 Boblingen, Germany
[2] IBM Corp, Syst & Technol Grp, Rochester, MN 55901 USA
[3] IBM Corp, Syst & Technol Grp, Austin, TX 78758 USA
[4] Sony Comp Entertainment Amer, Austin, TX 78759 USA
[5] Toshiba Amer Elect Components, Austin, TX 78759 USA
[6] IBM Engn & Technol Serv, Otsu, Shiga 5202392, Japan
关键词
Cell Broadband Engine; cell circuits; cell processor; delayed reset domino; flip-flop design; media-centric computing; modularity; multi-core; semi-custom circuit design; SoC; synergistic processor; 90-nm SOI;
D O I
10.1109/JSSC.2006.877234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Cell Broadband Engine (Cell BE) is a multicore system-on-chip (SoC), implemented in a 90-nm high-performance silicon-on-insulator (SOI) technology, and optimized, within the triple constraints of area, power, and performance, to run at frequencies in excess of 3 GHz. The large scale of the design (similar to 75 million logic transistors, and about 750 000 latches and flip-flops), high-volume requirements, and the desire to support multiple manufacturing facilities dictated a need for very robust circuit practices, but at the same time, the high-frequency goal drove the use of more aggressive styles in certain critical regions of the design. This paper describes the local clock design, along with the various latches and flip-flops deployed, followed by a discussion of the circuit techniques used for the digital logic implementation, including special considerations for high-speed synthesized control logic, semi-custom and full-custom static circuit design and full-custom dynamic logic circuits. In addition, the synergistic processor element (SPE) circuit design is described, followed by the techniques and issues associated with the SRAM design. Finally, the methods used for electrical verification are described, these being an important part of the strategy for ensuring overall design robustness and first-silicon success.
引用
收藏
页码:1692 / 1706
页数:15
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