Quantitative analysis of indium deposited layer formation mechanism for In/In4Se3 (100) nanosystem

被引：5

作者：

Galiy, P. V. ^{[1
]}

Nenchuk, T. M. ^{[1
]}

Mazur, P. ^{[2
]}

Ciszewski, A. ^{[2
]}

Yarovets, I. R. ^{[1
]}

机构：

[1] Ivan Franko Lviv Natl Univ, Elect & Comp Technol Dept, 50 Dragomanov St, UA-79005 Lvov, Ukraine

[2] Univ Wroclaw, Inst Expt Phys, Pl Maxa Borna 9, PL-50204 Wroclaw, Poland

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2018年 / 674卷 / 01期

关键词：

Layered trichalcogenides; Self-assembling nanostructures; Nanowires; Scanning tunneling microscopy; spectroscopy; 68; 37; Ef; 47; De; Fg; 73; 20; At; 75; 70; Cn; HIGH THERMOELECTRIC PERFORMANCE;

D O I：

10.1080/15421406.2019.1578487

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Indium deposited coatings formation on (100) surface of In4Se3 layered semiconductor crystal was studied by scanning tunneling spectroscopy/microscopy (STS/STM) in UHV. STM/STS show on thermal activation-migration movement of the deposited metallic component over the studied area which acts as directed template for 1D nanostructures formation. The STM data were processed by means of roughness analysis. The frequency of occurrence of tunneling currents above a certain background level in STS data for the range of bias voltages corresponding to 0.67 eV In4Se3 band gap shows a linear dependence of the metal points' number of analysis on indium deposition time.

引用

页码：11 / 18

页数：8

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