Ligand Exchange Functionalization of CIS Quantum Dots for CIS/ZnO Film Heterojunctions

被引:5
作者
Zheng, Yaxin [1 ]
Sadeghimakki, Bahareh [1 ]
Brunning, Jacob A. L. [1 ]
Sivoththaman, Siva [1 ]
机构
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
关键词
Quantum dots; copper indium sulfide; ligand exchange; colloidal solution; photodetectors; OPTICAL-PROPERTIES; THIN-FILMS; BAND-GAP; NANOCRYSTALS;
D O I
10.1109/TNANO.2019.2927951
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Colloidal quantum dots (QD) are rapidly making their way into several optoelectronic applications. While Cd- and Pb-basedQDsare promising for high-performance devices, toxicity remains a concern. In this regard, Cu-In-S (CIS) QDs provide an alternative option for scalable, commercial production. A low-temperature, high-throughput process was used to synthesize CIS QDs with 1-dodecanethiol (DDT) ligands. While QD synthesis with a DDT ligand is facile, there are drawbacks when it comes to device implementation and interfacing with electron transport films such as ZnO. A ligand exchange process was employed to replace the DDT ligands in the as-synthesized QDs with 3-mercaptopropionic acid (MPA); owing to the short and bifunctional nature of theMPA molecules, this process improved the surface adhesion and carrier transport to ZnO. I-V measurements on planar structures showed the significance of ligand exchange in CIS QDs for heterojunction device implementation.
引用
收藏
页码:728 / 733
页数:6
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