Conductance oscillations in a deformable quantum ring

被引:3
作者
Yang, SH
Adourian, AS
Westervelt, RM
Campman, KL
Gossard, AC
机构
[1] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138
[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93110
关键词
nanofabrications; electronic transport; quantum Hall effect; tunneling;
D O I
10.1016/S0038-1098(96)00499-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Low temperature magnetoconductance oscillation measurements are reported for a deformable quantum ring. The quantum ring is formed from a two-dimensional electron gas in a GaAs/Al0.3Ga0.7As heterostructure via electrostatic gates: outside gates define the outer perimeter with two quantum point contacts and a separately contacted center gate forms a central hole with adjustable size. Three lithography layers, aligned to 50 nm precision, were required to achieve independent contact to the center gate. Series of magneto-oscillation power spectra for increasing size of the central hole show two sets of peaks: one at essentially constant magnetic frequency corresponding to the area enclosed by the outer circumference as for edge-state interference and one which shifts to lower frequency corresponding to the area of the electron ring. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码:845 / 849
页数:5
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