A Common-Base Linear RF Power Amplifier for 3G Cellular Applications

被引：0

作者：

Avanzo, Flavio ^{[1
]}

De Paola, Francesco M. ^{[1
]}

Manstretta, Danilo ^{[1
]}

机构：

[1] Univ Pavia, Dipartimento Elettron, I-27100 Pavia, Italy

来源：

PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2008年

关键词：

D O I：

10.1109/CICC.2008.4672151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A linear power amplifier for 3G cellular applications is presented. The amplifier operates in common-base configuration and can sustain output voltages in excess of BVCEO. The chip, implemented in a 0.25 mu m SiGe:C technology, occupies 2.76 mm(2). When operated from a 4.5 V supply, the amplifier has a measured power gain of 20 dB at 1.85 GHz. At 1dB Compression Point, the amplifier delivers 27 dBm with a power-added efficiency of 33%. Saturated output power is 28.2 dBm with 37% power-added efficiency.

引用

页码：579 / 582

页数：4

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