Gallium-nitride microwave Doherty power amplifier with 40 WPEP and 68% PAE

被引：6

作者：

Cho, K. J.

Kim, W. J.

Stapleton, S. P.

Kim, J. H.

Lee, B.

Choi, J. J.

Kim, J. Y.

机构：

[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada

[2] Kwangwoon Univ, Dept Radio & Sci Engn, Seoul 139701, South Korea

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 12期

关键词：

D O I：

10.1049/el:20061004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 40 W gallium-nitride microwave Doherty power amplifier for WCDMA repeater applications is presented. The main amplifier and peaking amplifier are implemented using two 20 W PEP GaN HEMTs. Performance is evaluated for broadband gain, power efficiency and adjacent-channel-power-ratio (ACPR). Experimental results of the GaN Doherty amplifier yielded a power gain of over 11 dB from 1.8 to 2.5 GHz, 68% power added efficiency at 40 W peak power. Good linearity performance of -48 dBc ACPR is obtained at a peak-to-average ratio of 9.8 dB.

引用

页码：704 / 705

页数：2

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