Magnetostriction and electrical resistivity of Si doped Tb0.3Dy0.7Fe1.95 oriented crystals

被引:30
作者
Xu, Lihong [1 ]
Jiang, Chengbao [1 ]
Xu, Huibin [1 ]
机构
[1] Beijing Univ Aeronaut & Astronaut, Dept Mat Sci & Engn, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2384800
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetostriction and the electrical resistivities of as-cast and < 110 > oriented crystals of Tb0.3Dy0.7(Fe1-xSix)(1.95) (x=0,0.025,0.1) were investigated. Giant magnetostriction and obvious magnetostrictive jump effect were observed in oriented Si doped TbDyFeSi crystals especially for x=0.025. The electrical resistivities of both as-cast and < 110 > oriented TbDyFeSi were studied at the temperature range from 250 to 300 K. Drastic increases of resistivity were observed in the as-cast Si doped TbDyFeSi magnetostrictive alloys with the increase ratios of 66% and 97% for x=0.025 and 0.1, respectively, compared with traditional Tb0.3Dy0.7Fe1.95 alloy. The electrical resistivities of oriented alloys are slightly smaller in comparison with that of the as-cast ones.
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页数:3
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