The influence of post-annealing temperature on indium-silicon oxide thin film transistors

被引：5

作者：

Arulkumar, S. ^{[1
]}

Parthiban, S. ^{[1
]}

Kwon, J. Y. ^{[2
]}

机构：

[1] PSG Inst Adv Studies, Adv Mat & Devices Lab, Coimbatore 641004, Tamil Nadu, India

[2] Yonsei Univ, Sch Integrated Technol, Incheon 406840, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 145卷

关键词：

RF sputtering; Amorphous metal oxide semiconductor; Thin film transistor; Indium silicon oxide thin film transistors;

D O I：

10.1016/j.mssp.2022.106665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various tempera -tures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 degrees C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm(2)/V.s was achieved for ISO TFT post-annealed at 200 degrees C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties.

引用

页数：6

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