High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate

We propose and demonstrate Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) on a high thermal conductivity AlN/Si substrate to improve the heat dissipation capability and keep their cost-effectiveness. Owing to the optimized source/drain contact and Al2O3/Ga2O3 interface, a drain current of 580 mA/mm and peak intrinsic transconductance G(m,int) of 35.5 mS/mm were achieved, which are among the highest for all the reported top-gate Ga2O3 MOSFETs. A peak mobility of 82.9 cm(2)/V.s, a high saturation velocity v(sat) of 1.1 x 10(7) cm/s, and a low interface trap density of 1.1 x 10(12) cm(-2)eV(-1) are also obtained. Pulse measurement reveals the good heat dissipation capability of the AlN/Si substrate. A three terminal off-state breakdown voltage V-br of 118 V, a small specific on resistance R-on,R-sp of 1.44 m Omega.cm(2), and power figure-of-merit of 9.7 MW/cm(2) are achieved in a device with L-GD of 1.14 mu m. These excellent results indicate the great potential of Ga2O3 MOSFETs on AlN/Si substrate for future power electronics applications.