Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films

被引：18

作者：

Pothiraja, Ramasamy ^{[1
]}

Milanov, Andrian P. ^{[1
]}

Barreca, Davide ^{[3
,4
]}

Gasparotto, Alberto ^{[2
,4
]}

Becker, Hans-Werner ^{[5
]}

Winter, Manuela ^{[1
]}

Fischera, Roland A. ^{[1
]}

Devi, Anjana ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Anorgan Chem 2, Inorgan Mat Chem Grp, D-44780 Bochum, Germany

[2] Univ Padua, Dept Chem, I-35131 Padua, Italy

[3] ISTM CNR, I-35131 Padua, Italy

[4] INSTM, I-35131 Padua, Italy

[5] Ruhr Univ Bochum, Lehrstuhl Expt Phys 3, D-44780 Bochum, Germany

来源：

CHEMICAL COMMUNICATIONS | 2009年 / 15期

关键词：

CHEMICAL-VAPOR-DEPOSITION; MOCVD; COMPLEXES; ZRO2;

D O I：

10.1039/b821128k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Novel volatile compounds of hafnium, namely tetrakis-N,O-dialkylcarbamato hafnium(IV) [Hf((PrNC)-Pr-i(O)(OPr)-Pr-i)(4)] (1) and tetrakis-N,N,N'-trialkylureato hafnium(IV) [Hf((PrNC)-Pr-i(O)N-(Me)Et)(4)] (2), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound 1 has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO2 thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250 degrees C.

引用

页码：1978 / 1980

页数：3

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