Time-Resolved Photoluminescence Properties of ZnO Thin Films Evaporated by Atomic Layer Deposition

被引：1

作者：

Choi, Jiung ^{[1
]}

Lee, Myung-Jin ^{[1
]}

Chae, Weon-Sik ^{[1
,2
]}

机构：

[1] Gangneung Ctr, Korea Basic Sci Inst, Kangnung 210702, South Korea

[2] Korea Basic Sci Inst, Anal Res Div, Daegu Ctr, Taegu 702701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2015年 / 15卷 / 11期

关键词：

ZnO; Thin Films; Photoluminescence; Lifetime; Lifetime Image; CHEMICAL-VAPOR-DEPOSITION; SENSITIZED SOLAR-CELLS; OPTICAL-PROPERTIES; TEMPERATURE; NANOSTRUCTURES; GROWTH;

D O I：

10.1166/jnn.2015.11463

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have studied time-resolved photoluminescence (PL) properties of ZnO thin films which were grown by layer-by-layer manner using atomic layer deposition (ALD) method. The deposited film thickness was estimated by X-ray reflectance spectroscopy, which proved that the ALD system deposited similar to 1.57 angstrom/cycle in thickness. As-grown films showed typical band-edge and surface defect induced emissions. The evaluated PL lifetimes showed interesting trend as the film thickness approaching to exciton Bohr diameter. Moreover, PL lifetime imaging technique clearly showed the characteristic lifetime modulation with changing film thickness in both band-edge and surface defect emissions.

引用

页码：8542 / 8546

页数：5

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