Advanced STI patterning for 70nm DRAM technology and beyond

被引：9

作者：

Stavrev, M ^{[1
]}

Scire, A ^{[1
]}

Vogt, M ^{[1
]}

Klingbeil, P ^{[1
]}

Liao, CC ^{[1
]}

Gruss, S ^{[1
]}

Froehlich, HG ^{[1
]}

Mothes, K ^{[1
]}

Bauch, L ^{[1
]}

Wege, S ^{[1
]}

Thyssen, N ^{[1
]}

机构：

[1] Infineon Technol SC300 GmbH & Co KG, D-01099 Dresden, Germany

来源：

2004 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: ADVANCING THE SCIENCE AND TECHNOLOGY OF SEMICONDUCTOR MANUFACTURING EXCELLENCE | 2004年

关键词：

DRAM; STI; etch; hard mask; carbon;

D O I：

10.1109/ASMC.2004.1309541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents the results on the patterning of shallow trench isolation for the 70nm DRAM technology node on 300mm wafers. Using a new triple hard mask approach incorporating a carbon film patterns with 70nm CD and STI depth of about 250nm could be achieved.

引用

页码：84 / 88

页数：5

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