Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

被引：45

作者：

Li, Panpan ^{[1
]}

Li, Hongjian ^{[1
]}

Zhang, Haojun ^{[1
]}

Yang, Yunxuan ^{[1
]}

Wong, Matthew S. ^{[1
]}

Lynsky, Cheyenne ^{[1
]}

Iza, Mike ^{[1
]}

Gordon, Michael J. ^{[3
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

DenBaars, Steven P. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2022年 / 120卷 / 12期

关键词：

LOW-VOLTAGE; GROWTH;

D O I：

10.1063/5.0086912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present efficient red InGaN 60 x 60 mu m(2) micro-light-emitting diodes (mu LEDs) with an epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor deposition using selective area growth. The red TJ mu LEDs show a uniform electroluminescence. At a low current density of 1 A/cm(2), the emission peak wavelength is 623 nm with a full-width half maximum of 47 nm. The peak external quantum efficiency (EQE) measured in an integrating sphere is as high as 4.5%. These results suggest a significant progress in exploring high efficiency InGaN red mu LEDs using TJ technology. Published under an exclusive license by AIP Publishing.

引用

页数：5

共 34 条

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Red InGaN micro-light-emitting diodes (&gt;620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact