A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis

被引：64

作者：

Larcher, Luca ^{[1
]}

Puglisi, Francesco Maria ^{[2
]}

Pavan, Paolo ^{[2
]}

Padovani, Andrea ^{[1
]}

Vandelli, Luca ^{[1
]}

Bersuker, Gennadi ^{[3
]}

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy

[2] Univ Modena & Reggio Emilia, Dipartimento Ingn Enzo Ferrari, I-41100 Modena, Italy

[3] SEMATECH, Albany, NY USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 08期

关键词：

Charge transport; compact modeling; nonvolatile memories; LEAKAGE CURRENT; BREAKDOWN;

D O I：

10.1109/TED.2014.2329020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a physics-based compact model for the program window in HfOx resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive filament (CF) in HRS. For a given forming current compliance limit, the program window is shown to be correlated to the thickness of the reoxidized portion of the CF in HRS, which can be modulated by the reset voltage amplitude. On the other hand, the statistical distribution of the memory window depends exponentially on the barrier thickness variations that points to the critical role of reset conditions for the performance optimization of RRAM devices.

引用

页码：2668 / 2673

页数：6

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