Thermoelectric Properties of Junctions Between Metal and Models of Strongly Correlated Semiconductors

被引：0
作者：
Rontani, M. [1 ]
Sham, L. J. [2 ]
机构：
[1] CNR INFM Res Ctr S3, Via Campi 213-A, I-41100 Modena, MO, Italy
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
来源：
PROPERTIES AND APPLICATIONS OF THERMOELECTRIC MATERIALS: THE SEARCH FOR NEW MATERIALS FOR THERMOELECTRIC DEVICES | 2009年
关键词：
FALICOV-KIMBALL MODEL; FERMI-GAS/LIQUID INTERFACES; THERMAL-CONDUCTIVITY; KONDO INSULATOR; SUPERLATTICES; MERIT; FIGURE; REFRIGERATION; TRANSPORT; HYBRIDIZATION;
D O I：
10.1007/978-90-481-2892-1_12
中图分类号：
Q6 [生物物理学];
学科分类号：
071011 ;
摘要：
We study the thermopower of a junction between a metal and a strongly correlated semiconductor. Both in the electronic ferroelectric regime and in the Kondo insulator regime the thermoelectric figures of merit, ZT, of these junctions are compared with that of the ordinary semiconductor. By inserting at the interface one or two monolayers of atoms different from the bulk, with a suitable choice of rare-earth elements, very high values of thermopower may be reached at low temperatures.
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页码：193 / +
页数：3
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