Microstructural development inside the stress induced martensite variant in a Ti-Ni-Nb shape memory alloy

被引:41
|
作者
Zheng, YF [1 ]
Cai, W
Zhang, JX
Zhao, LC
Ye, HQ
机构
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
[2] Acad Sinica, Inst Met Res, Atom Imaging Solids Lab, Shenyang 110015, Peoples R China
基金
中国国家自然科学基金;
关键词
shape memory; martensite; microstructure; interface; transmission electron microscopy (TEM);
D O I
10.1016/S1359-6454(99)00391-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructural development inside the stress induced martensite (SIM) variants in Ti-Ni-Nb alloy with various degrees of deformation have been revealed by electron microscopic observations. The orientation relationship between the SIM and the parent phase has been found: [1(1) over bar 0](M)//[11(1) over bar](B2), (001)(M) 5 degrees away from (101)(B2) The lattice invariant shear of the SIM variants at the slightly deformed stage is dominantly (11(1) over bar) Type I twin. Besides the ordinary slip, the adjustment and development of the internal secondary twinning from (11(1) over bar) Type I twin to [011] Type II/or (011) Type I twin, (001) compound twin and (111)Type I twin happen concurrently or in combination inside the SIM variants with the further deformation. The corresponding deformation mechanisms include stress induced reorientation of SIM substructural bands by the most favorably oriented twin system, stress induced migration of the SIM substructural boundary through internal twinning and stress induced injection of foreign SIM variant to the preexisting substructural bands. (C) 2000 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1409 / 1425
页数:17
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