An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

被引：28

作者：

Dehan, M ^{[1
]}

Raskin, JP ^{[1
]}

机构：

[1] Catholic Univ Louvain, Microwave Lab, B-1348 Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 07期

关键词：

D O I：

10.1016/S0038-1101(02)00034-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Asymmetric doped channel metal oxide semiconductor field effect transistors (MOSFETs) have recently been investigated by several authors in bulk and silicon-on-insulator (Sol) technologies as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage rolloff issues in deep sub-micrometer devices. In this paper, the DC and microwave characteristics of the asymmetric doped channel fully depleted (FD) SOI MOSFET are presented and compared to conventional uniformly doped FD SOI MOSFET. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1005 / 1011

页数：7

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