Self-assembly of Ge quantum dots on periodically corrugated Si surfaces

被引:3
作者
Buljan, M. [1 ]
Facsko, S. [2 ]
Marion, I. Delac [3 ]
Trontl, V. Miksic [3 ]
Kralj, M. [3 ]
Jercinovic, M. [1 ]
Baehtz, C. [2 ]
Muecklich, A. [2 ]
Holy, V. [4 ]
Radic, N. [1 ]
Grenzer, J. [2 ]
机构
[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia
[2] Helmholtz Zentrum Dresden Rossendorf, D-01328 Dresden, Germany
[3] Inst Phys, Zagreb 10000, Croatia
[4] Charles Univ Prague, Prague 12161, Czech Republic
关键词
X-RAY-DIFFRACTION; STRUCTURAL-CHARACTERIZATION; MICROSCOPY;
D O I
10.1063/1.4935859
中图分类号
O59 [应用物理学];
学科分类号
摘要
The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically ordered substrates, while the ordering parameters are quite limited by the surface properties of the substrate. Here, we demonstrate a simple method for fabrication of ordered Ge quantum dots with highly tunable ordering parameters on rippled Si surfaces. The ordering is achieved by magnetron sputter deposition, followed by an annealing in high vacuum. We show that the type of ordering and lattice vector parameters of the formed Ge quantum dot lattice are determined by the crystallographic properties of the ripples, i.e., by their shape and orientation. Moreover, the ordering is achieved regardless the initial amorphisation of the ripples surface and the presence of a thin oxide layer. (c) 2015 AIP Publishing LLC.
引用
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页数:5
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