Degradation of 0.25 μm GaN HEMTs under high temperature stress test

被引：11

作者：

Dammann, M. ^{[1
]}

Baeumler, M. ^{[1
]}

Brueckner, P. ^{[1
]}

Bronner, W. ^{[1
]}

Maroldt, S. ^{[1
]}

Konstanzer, H. ^{[1
]}

Wespel, M. ^{[1
]}

Quay, R. ^{[1
]}

Mikulla, M. ^{[1
]}

Graff, A. ^{[2
]}

Lorenzini, M. ^{[3
]}

Fagerlind, M. ^{[3
]}

van der Wel, P. J. ^{[3
]}

Roedle, T. ^{[3
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Fraunhofer Inst Mech Mat, D-06120 Halle, Germany

[3] NXP Semicond, NL-6534 AE Nijmegen, Netherlands

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 9-10期

关键词：

GaN; HEMT; Reliability; Infrared microscopy; TEM; Degradation mechanism; Au-Diffusion; Void; Electroluminescence; Storage test; Drain-current step stress; THERMAL-CONDUCTIVITY; RELIABILITY; DIFFUSION;

D O I：

10.1016/j.microrel.2015.06.042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of device degradation of AlGaN/GaN HEMTs on SiC substrate with a gate length of 0.25 mu m has been investigated. The critical surface temperature, where device degradation sets in has been determined using drain-current step-stress tests in combination with infrared microscopy. Using this fast reliability test, devices with different passivation technologies have been compared and, by optimizing the passivation technology, the critical temperature at which degradation of the threshold voltage begins has been improved from 310 degrees C to above 330 degrees C. Storage tests at 300 degrees C in nitrogen atmosphere confirm the improvement in high temperature stability. Physical failure analysis using electroluminescence and TEM/EDX cross-section revealed void formation and Au-diffusion at the gate as the main degradation mechanisms of devices with the conventional passivation technology. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：1667 / 1671

页数：5

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