Enhancement-mode Al2O3/InAlN/AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment

被引：13

作者：

Zhao, ShengLei ^{[1
]}

Xue, JunShuai ^{[1
]}

Zhang, Peng ^{[1
]}

Hou, Bin ^{[2
]}

Luo, Jun ^{[1
]}

Fan, XiaoJiao ^{[1
]}

Zhang, JinCheng ^{[1
]}

Ma, XiaoHua ^{[1
,2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Bandgap Semicond Mat & Devices, Xian 710071, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 07期

基金：

中国国家自然科学基金;

关键词：

ALGAN/GAN HEMTS; POWER ELECTRONICS; PERFORMANCE;

D O I：

10.7567/APEX.7.071002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an enhancement-mode (E-mode) Al2O3/InAlN/AlN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MISHEMT) with enhanced breakdown voltage. The threshold voltage V-th shifts from -7.6 to 1.8 V using fluoride-based plasma treatment. The gate leakage current and the buffer leakage current were reduced by the conduction band modulation of negative fluorine charges. The reduction in the buffer leakage current enhanced the breakdown voltage from 80 to 183 V with L-GD = 3 mu m. The fabricated E-mode MISHEMT with a gate length of 1 pm exhibits a respectable drain current of 416 mA/mm and a peak transconductance of 150 mS/mm. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 19 条

[1] High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].

Cai, Y ;

Zhou, YG ;

Chen, KJ ;

Lau, KM .

IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) :435-437

[2] Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode [J].

Cai, Yong ;

Zhou, Yugang ;

Lau, Kei May ;

Chen, Kevin J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2207-2215

[3] The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs [J].

Cuerdo, R. ;

Pei, Y. ;

Chen, Z. ;

Keller, S. ;

DenBaars, S. P. ;

Calle, F. ;

Mishra, U. K. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (03) :209-212

[4] Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy [J].

Kehagias, Th. ;

Dimitrakopulos, G. P. ;

Kioseoglou, J. ;

Kirmse, H. ;

Giesen, C. ;

Heuken, M. ;

Georgakilas, A. ;

Neumann, W. ;

Karakostas, Th. ;

Komninou, Ph. .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[5] Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors [J].

Kuzmik, J. ;

Pozzovivo, G. ;

Ostermaier, C. ;

Strasser, G. ;

Pogany, D. ;

Gornik, E. ;

Carlin, J. -F. ;

Gonschorek, M. ;

Feltin, E. ;

Grandjean, N. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)

[6] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

[7] 3000-V 4.3-Ω . cm2 InAlN/GaN MOSHEMTs With AlGaN Back Barrier [J].

Lee, Hyung-Seok ;

Piedra, Daniel ;

Sun, Min ;

Gao, Xiang ;

Guo, Shiping ;

Palacios, Tomas .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) :982-984

[8] Characteristics of Al2O3/AllnN/GaN MOSHEMT [J].

Medjdoub, F. ;

Sarazin, N. ;

Tordjman, M. ;

Magis, M. ;

di Forte-Poisson, M. A. ;

Knez, M. ;

Delos, E. ;

Gaquiere, C. ;

Delage, S. L. ;

Kohn, E. .

ELECTRONICS LETTERS, 2007, 43 (12) :691-692

[9] Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors [J].

Nanjo, Takuma ;

Takeuchi, Misaichi ;

Suita, Muneyoshi ;

Oishi, Toshiyuki ;

Abe, Yuji ;

Tokuda, Yasunori ;

Aoyagi, Yoshinobu .

APPLIED PHYSICS LETTERS, 2008, 92 (26)

[10] Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications [J].

Saito, W ;

Takada, Y ;

Kuraguchi, M ;

Tsuda, K ;

Omura, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (02) :356-362

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