Spatial distribution of free carrier concentration in vertical GaN Gunn-diode structures studied by confocal micro-Raman spectroscopy and Kelvin probe force microscopy

被引：3

作者：

Strelchuk, V. V. ^{[1
]}

Nikolenko, A. S. ^{[1
]}

Lytvyn, P. M. ^{[1
]}

Romanyuk, A. S. ^{[1
]}

Mazur, Yu. I. ^{[2
]}

Ware, M. E. ^{[2
]}

DeCuir, E. A., Jr. ^{[2
]}

Salamo, G. J. ^{[2
]}

Belyaev, A. E. ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, Pr Nauki 45, UA-03680 Kiev, Ukraine

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2 | 2014年 / 11卷 / 02期

关键词：

gallium nitride; Gunn-diode; micro-Raman spectroscopy; carrier profile; Kelvin probe force microscopy; HEXAGONAL GAN; SCATTERING; LAYERS;

D O I：

10.1002/pssc.201300294

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Scanning confocal micro-Raman and PL spectroscopy, Kelvin probe force microscopy (KPFM) and electrostatic force gradient microscopy (EFGM) were applied to study the concentration profiles of free carriers by scanning the cleaved edge along the growth direction of vertical n(+)/n(0)/n(+)-GaN Gunn-diode structure. The vertical frequency profile of the L-branch of the plasmon-LO-phonon modes was used to evaluate the concentration of free charge carriers. Obtained significant contrast through the undoped n(0)-GaN region validates the expected reduction in carrier concentration. Variation of the local contrast in cross-section KPFM and EFGM electrical images reflects the topology of the device structure and makes it possible to estimate electronic properties of individual GaN layers as well as interface boundaries. The carrier profiles determined from the Raman data and KPFM measurements are in good agreement. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：269 / 273

页数：5

共 22 条

[1] Surface potential of n- and p-type GaN measured by Kelvin force microscopy [J].

Barbet, S. ;

Aubry, R. ;

di Forte-Poisson, M-A. ;

Jacquet, J-C. ;

Deresmes, D. ;

Melin, T. ;

Theron, D. .

APPLIED PHYSICS LETTERS, 2008, 93 (21)

[2]

CORLE TR, 1996, CONFOCAL SCANNING OP, pCH3

[3] Phonon dispersion and Raman scattering in hexagonal GaN and AlN [J].

Davydov, VY ;

Kitaev, YE ;

Goncharuk, IN ;

Smirnov, AN ;

Graul, J ;

Semchinova, O ;

Uffmann, D ;

Smirnov, MB ;

Mirgorodsky, AP ;

Evarestov, RA .

PHYSICAL REVIEW B, 1998, 58 (19) :12899-12907

[4] Point defects in γ-irradiated n-GaN [J].

Emtsev, VV ;

Davydov, VY ;

Kozlovskii, VV ;

Lundin, VV ;

Poloskin, DS ;

Smirnov, AN ;

Shmidt, NM ;

Usikov, AS ;

Aderhold, J ;

Klausing, H ;

Mistele, D ;

Rotter, T ;

Stemmer, J ;

Semchinova, O ;

Graul, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (01) :73-78

[5]

Girard P., 2006, ELECTROSTATIC FORCE

[6] Properties of GaN and related compounds studied by means of Raman scattering [J].

Harima, H .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (38) :R967-R993

[7] DETERMINATION OF THE CHARGE CARRIER CONCENTRATION AND MOBILITY IN N-GAP BY RAMAN-SPECTROSCOPY [J].

IRMER, G ;

TOPOROV, VV ;

BAIRAMOV, BH ;

MONECKE, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (02) :595-603

[8]

Jonkman J. E. N., 2002, CONFOCAL 2 PHOTON MI

[9] Free-carrier and phonon properties of n- and p-type hexagonal GaN films measured by infrared ellipsometry [J].

Kasic, A ;

Schubert, M ;

Einfeldt, S ;

Hommel, D ;

Tiwald, TE .

PHYSICAL REVIEW B, 2000, 62 (11) :7365-7377

[10] Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN [J].

Kasic, A ;

Schubert, M ;

Kuhn, B ;

Scholz, F ;

Einfeldt, S ;

Hommel, D .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3720-3724

← 1 2 3 →