Characterization of photovoltage evolution of ZnO films using a scanning Kelvin probe system

被引：20

作者：

Li, W. ^{[1
]}

Wu, C. W. ^{[1
]}

Qin, W. G. ^{[1
]}

Wang, G. C. ^{[1
]}

Lu, S. Q. ^{[1
]}

Dong, X. J. ^{[1
]}

Dong, H. B. ^{[1
]}

Sun, Q. L. ^{[1
]}

机构：

[1] Nanchang Hangkong Univ, Sch Mat Sci & Engn, Nanchang 330063, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 16期

关键词：

Kelvin probe; Photovoltage; Work function; ZnO; FIELD-EMISSION; WORK FUNCTION; SOLAR-CELLS; PHOTOLUMINESCENCE;

D O I：

10.1016/j.physb.2009.04.026

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Work function (WF) and surface photovoltage evolution of films can be measured using the Kelvin probe technique, and further analysis of the photoelectronic behavior can provide information on the energy level structure. In this paper, a theoretical analysis to measure surface photovoltage using Kelvin probe technique is presented. Based on this analysis, the surface photovoltage and its time-resolved evolution process as well as the energy level structure of ZnO films are determined using a scanning Kelvin probe. The present study therefore provides a simple and practical methodology for the characterization of the electronic behavior of films. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2197 / 2201

页数：5

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