A Wide Input Range Dual-Path CMOS Rectifier for RF Energy Harvesting

被引：126

作者：

Lu, Yan ^{[1
]}

Dai, Haojuan ^{[1
,2
]}

Huang, Mo ^{[1
]}

Law, Man-Kay ^{[1
]}

Sin, Sai-Weng ^{[1
,2
]}

U, Seng-Pan ^{[1
,2
]}

Martins, Rui P. ^{[1
,2
,3
]}

机构：

[1] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Macau, Peoples R China

[2] Univ Macau, Fac Sci & Technol, Dept Elect & Comp Engn, Macau, Peoples R China

[3] Univ Lisbon, Inst Super Tecn, P-1649004 Lisbon, Portugal

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2017年 / 64卷 / 02期

关键词：

CMOS rectifier; cross-connected (CC) rectifier; RF energy harvesting; ultrahigh frequency (UHF); wireless power transfer (WPT); DESIGN; SENSOR;

D O I：

10.1109/TCSII.2016.2554778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a dual-path CMOS rectifier with adaptive control for ultrahigh-frequency (UHF) RF energy harvesters. The input power range with high power conversion efficiency (high PCE) of the rectifier is extended by the proposed architecture, which includes a low-power path and a high-power path. The dual-path rectifier with an adaptive control circuit is fabricated in a 65-nm CMOS process. Operating at 900 MHz and driving a 147-k Omega load resistor, the measured PCE of this work can be maintained above 20% with an 11-dB input range from -16 to -5 dBm, while only an 8-dB input range can be achieved with traditional single-path rectifiers. A sensitivity of -17.7 dBm is measured with 1-V output voltage across a capacitive load.

引用

页码：166 / 170

页数：5

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