Fermi surfaces of single layer dielectrics on transition metals

被引:16
|
作者
Greber, T. [1 ]
Corso, M. [1 ]
Osterwalder, J. [1 ]
机构
[1] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
基金
瑞士国家科学基金会;
关键词
Single layers; Hexagonal boron nitride; Photoemission; HEXAGONAL BORON-NITRIDE; H-BN; MONOLAYER; PHOTOEMISSION; EMISSION; NI(111); DISPERSION; GRAPHITE; NANOMESH; ATOMS;
D O I
10.1016/j.susc.2008.08.043
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Single sheets of hexagonal boron nitride on transition metals provide a model system for single layer dielectrics. The progress in the understanding of h-BN layers on transition metals of the last 10 years is shortly reviewed. Particular emphasis lies on the boron nitride nanomesh on Rh(1 1 1), which is a corrugated single sheet of h-BN, where the corrugation imposes strong lateral electric fields. Fermi surface maps of h-BN/Rh(1 1 1) and Rh(1 1 1) are compared. A h-BN layer on Rh(1 1 1) introduces no new bands at the Fermi energy, which is expected for an insulator. The lateral electric fields of h-BN nanomesh violate the conservation law for parallel momentum in photoemission and smear out the momentum distribution curves on the Fermi surface. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1373 / 1377
页数:5
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