Possibility of experimental determination of band structure parameters in many-valley semiconductors

被引：1

作者：

Vahanyan, A. I. ^{[1
]}

Baghiyan, Y. M. ^{[1
]}

机构：

[1] Yerevan State Univ, Yerevan 375049, Armenia

来源：

JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2014年 / 49卷 / 04期

关键词：

many-valley semiconductor; band structure; charge carriers;

D O I：

10.3103/S1068337214040057

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show possibility in principle to determine some parameters (density-of-states effective mass of different valleys, energy distances between valleys, energies of ionization of impurity levels split from different valleys) of the band structure in many-valley semiconductors, based on the experimental curve of temperature dependence of overall concentration of charge carriers.

引用

页码：165 / 167

页数：3