Recording double-exposure interferograms on a photothermoplastic carrier in photoinduced and photothermoplastic regimes

被引：9

作者：

Nastas, A. M. ^{[1
]}

Andriesh, A. M. ^{[1
]}

Bivol, V. V. ^{[1
]}

Slepnev, I. N. ^{[1
]}

Prisakar, A. M. ^{[1
]}

机构：

[1] Moldavian Acad Sci, Inst Appl Phys, Optoelect Ctr, Kishinev, Moldova

来源：

TECHNICAL PHYSICS LETTERS | 2009年 / 35卷 / 04期

关键词：

81.05.Ge;

D O I：

10.1134/S1063785009040269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is suggested to record double-exposure holographic interferograms on a photothermoplastic carrier based on chalcogenide glassy semiconductors (CGSs), with the first exposure performed using the regime of photoinduced changes in the semiconductor layer and the second, the photothermoplastic regime on the thermoplastic layer surface. It is shown that, during the second exposure, the image stored in the CGS layer is additionally developed on the thermoplastic layer surface. The development of this IhiddenI reference image on the thermoplastic layer makes possible the separate comparison of this image to each subsequent holographic image reversibly recorded in the photothermoplastic regime on the thermoplastic layer surface.

引用

页码：375 / 376

页数：2