Surface modifications in amorphous GeS induced by an electron beam.

被引：0
|
作者：
Romero, JS [1 ]
Fitzgerald, AG [1 ]
Mietzsch, K [1 ]
机构：
[1] Univ Dundee, Dept Elect Engn & Phys, Carnegie Lab Phys, Dundee DD1 4HN, Scotland
来源：
ELECTRON MICROSCOPY AND ANALYSIS 2001 | 2001年 / 168期
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Surface deformations appear in amorphous GeS when an electron beam with energy in the range 10 - 30 kV is focused in pulsed or continuous mode operation on the top of a thin film. Increase of the accelerating voltage and therefore the energy and the use of finer electron probes favour increase in the magnitude of the expansion and finer surface deformations. It is believed that the deformation is a consequence of structural modifications induced in the material by the electron beam.
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页码：89 / 92
页数：4
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