Gas-assisted electron-beam-induced nanopatterning of high-quality titanium oxide

被引:6
|
作者
Riazanova, A. V. [1 ]
Costanzi, B. N. [2 ]
Aristov, A. I. [3 ,4 ]
Rikers, Y. G. M. [4 ]
Mulders, J. J. L. [5 ]
Kabashin, A. V. [3 ]
Dahlberg, E. Dan [2 ]
Belova, L. M. [1 ,5 ]
机构
[1] Royal Inst Technology KTH, Dept Mat Sci & Engn, Brinellvagen 23, SE-10044 Stockholm, Sweden
[2] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[3] Aix Marseille Univ, CNRS, UMR 7341, LP3, Campus Luminy Case 917, F-13288 Marseille 9, France
[4] Inst Pasteur, Unite Imagerie & Modelisat, Computat Imaging & Modeling Unit, Dept Biol Cellulaire & Infect,CNRS,UMR 3691, 25-28 Rue Docteur Roux, F-75015 Paris, France
[5] FEI Electron Opt, Achtseweg Noord 5, NL-5600 KA Eindhoven, Netherlands
基金
瑞典研究理事会;
关键词
gas-assisted EBID; 3D nanopatterning; high-purity insulator; titanium tetra-isopropoxide (TTIP); purification; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; TIO2; THIN-FILMS; CARBON NANOTUBES; DIOXIDE; TEMPERATURE; CRYSTALLINE; GROWTH; NANOSTRUCTURES; FABRICATION;
D O I
10.1088/0957-4484/27/11/115304
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electron-beam-induced deposition of titanium oxide nanopatterns is described. The precursor is titanium tetra-isopropoxide, delivered to the deposition point through a needle and mixed with oxygen at the same point via a flow through a separate needle. The depositions are free of residual carbon and have an EDX determined stoichiometry of TiO2.2. High resolution transmission electron microscopy and Raman spectroscopy studies reveal an amorphous structure of the fabricated titanium oxide. Ellipsometric characterization of the deposited material reveals a refractive index of 2.2-2.4 RIU in the spectral range of 500-1700 nm and a very low extinction coefficient (lower than 10(-6) in the range of 400-1700 nm), which is consistent with high quality titanium oxide. The electrical resistivity of the titanium oxide patterned with this new process is in the range of 10-40 G Omega cm and the measured breakdown field is in the range of 10-70 V mu m(-1). The fabricated nanopatterns are important for a variety of applications, including field-effect transistors, memory devices, MEMS, waveguide structures, bio-and chemical sensors.
引用
收藏
页数:7
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