Comparaison Between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing Near Si-SiO2 Interface Traps

被引：0

作者：

Guenifi, N. ^{[1
,2
]}

Bauza, D. ^{[2
]}

机构：

[1] Univ Batna, Dept Elect, Batna, Algeria

[2] Minatec Grenoble, IMEP LAHC, Grenoble, France

来源：

DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING | 2014年 / 61卷 / 02期

关键词：

TRANSISTORS;

D O I：

10.1149/06102.0195ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxidesemiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).

引用

页码：195 / 202

页数：8

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