Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMT's

A static frequency divider constructed with resonant tunneling diodes (RTD's) in combination,vith HEMT's is proposed and demonstrated. The circuit complexity is reduced drastically, The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology, Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches, Each sub-circuit consists of only three components, This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology, The strong nonlinear I-V characteristics of RTD's are fully utilized for this reduction.