Fabrication and characteristics of ferromagnetic single electron transistors

被引：4
|
作者：
Philip, J
Wang, D
Muenzenberg, M
LeClair, P
Diouf, B
Moodera, JS
Lu, JG [1 ]
机构：
[1] Univ Calif Irvine, Irvine, CA 92697 USA
[2] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany
[3] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
single electron transistor; spin tunnel junction; spin accumulation;
D O I：
10.1016/j.jmmm.2003.12.1194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method for fabricating ferromagnetic single electron transistors with similar or different ferromagnetic electrodes is presented. In this method, the coercive fields of the electrodes can be easily distinguished. Calculations have been performed to optimize the device design and fabrication. Small values of island length, junction resistance and junction area are crucial for observing non-equilibrium spin accumulation in the island. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：1949 / 1951
页数：3
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