Effect of gravitation vector orientation relative to the solidification front on the micro- and macrohomogeneity of semiconductor crystals grown under terrestrial and space conditions

被引：2

作者：

Strelov, V. I. ^{[1
]}

Zakharov, B. G. ^{[1
]}

Artemiev, V. K. ^{[2
]}

机构：

[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Res Ctr Space Mat Sci, Kaluga 248640, Russia

[2] State Sci Ctr Russian Federat, Leypunsky Inst Phys & Power Engn, Obninsk 249033, Kaluzhskaya Obl, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION | 2009年 / 3卷 / 01期

关键词：

Surface Investigation; Neutron Technique; Gravity Force; Solidification Front; Marangoni Convection;

D O I：

10.1134/S1027451009010170

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of gravitation vector orientation relative to the solidification front on the dopant distribution micro- and macrohomogeneity in vertical oriented crystallization of highly Ga-doped Ge crystals has been investigated using computer simulation. The deviation of the axis for crystal growth relative to the g (0) vector, when a free surface of the melt is present, has been found to provide the formation of striations with a reduced dopant concentration. The influence of the solidification rate, convective and diffusion mass flows on the dopant distribution macrohomogeneity has been investigated.

引用

页码：98 / 104

页数：7

共 9 条

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