High-power sub-kHz linewidth lasers fully integrated on silicon

被引：145

作者：

Huang, Duanni ^{[1
]}

Tran, Minh A. ^{[1
]}

Guo, Joel ^{[1
]}

Peters, Jonathan ^{[1
]}

Komljenovic, Tin ^{[1
]}

Malik, Aditya ^{[1
]}

Morton, Paul A. ^{[2
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA

[2] Morton Photon, 3301 Velvet Valley Dr, West Friendship, MD 21794 USA

来源：

OPTICA | 2019年 / 6卷 / 06期

关键词：

HYBRID LASERS;

D O I：

10.1364/OPTICA.6.000745

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with similar to 1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to reducing the laser linewidth while maintaining high output power and single-mode operation. The combination of narrow linewidth and high power enable its use in coherent communications, RF photonics, and optical sensing. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：745 / 752

页数：8

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