Structure of Er-O complexes in crystalline Si -: art. no. 153310

被引：25

作者：

d'Acapito, F

Mobilio, S

Scalese, S

Terrasi, A

Franzó, G

Priolo, F

机构：

[1] European Synchrotron Radiat Facil, CRG, GILDA, INFM,OGG, F-38043 Grenoble, France

[2] Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy

[3] CNR, IMM, I-95121 Catania, Italy

[4] Univ Catania, INFM, I-95129 Catania, Italy

[5] Univ Catania, Dipartimento Fis, I-95129 Catania, Italy

[6] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Roma, Italy

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.69.153310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The local structure around Er3+ ions in Er+O doped silicon has been investigated by extended x-ray absorption spectroscopy. By comparing samples obtained by molecular-beam epitaxy and ion implantation a common structure comes out. Er is linked to five or six O atoms at around 2.24 Angstrom and there is a well defined Er-O-Si bond angle of 135degrees and an Er-Si separation of 3.6 Angstrom. The Er-Si distance is appreciably longer than that found in the more stable structures from ab-initio calculations and a discussion on the possible site for Er is presented.

引用

页码：153310 / 1

页数：4