Photoluminescence Study on the Preparation of Silicon Quantum Dots Nanoparticles

The structural study of silicon quantum dots nanoparticles (SQDNs) is a gateway to enormous array of application and new technologies in nowadays such as laser diode (LD) and biological detector. In this research we focus on the photoluminescence study on the Porous Silicon during the preparation of SQDNs. The SQDNs is prepared by electrochemical method through the free standing Porous Silicon (PSi). The p-type (100) Silicon Wafer with surface resistivity of 1-10 ohm cm(-1) was used as substrate while ethnoic hydrofluoric solution at 1:1 ratio used as an electrolyte. The samples were prepared for 5 minutes, 10 minutes, and 20 minutes etching time with current density 20 mAcm(-2) before increasing its etching time and current density for 30 minutes and 50 mAcm(-2). PL activity show the wavelength become shorter as the size particle is smallest.