Production of nano- and microdiamonds with Si-V and N-V luminescent centers at high pressures in systems based on mixtures of hydrocarbon and fluorocarbon compounds

被引:66
作者
Davydov, V. A. [1 ]
Rakhmanina, A. V. [1 ]
Lyapin, S. G. [1 ]
Ilichev, I. D. [2 ]
Boldyrev, K. N. [3 ]
Shiryaev, A. A. [4 ,5 ]
Agafonov, V. N. [6 ]
机构
[1] Russian Acad Sci, Inst High Pressure Phys, Moscow 142190, Russia
[2] State Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
[3] Russian Acad Sci, Inst Spect, Moscow 142190, Russia
[4] Russian Acad Sci, Frumkin Inst Phys Chem & Electrochem, Moscow 119017, Russia
[5] Russian Acad Sci, Inst Geol Ore Deposits Petrog Mineral & Geochem, Moscow 119017, Russia
[6] Univ F Rabelais, GREMAN, CNRS, UMR CEA 6157, F-37200 Tours, France
基金
俄罗斯基础研究基金会;
关键词
DIAMOND; PHOTOLUMINESCENCE; GRAPHITE; FLUORINE; HYDROGEN; RAMAN;
D O I
10.1134/S002136401410004X
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A new method has been proposed for the synthesis of nano- and microdiamonds with various contents of luminescent silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) centers at high static pressures in growth systems based on mixtures of hydrocarbon, fluorocarbon, and organic silicon compounds without catalyst metals. The high efficiency of the proposed method of the doping of diamonds at nano- and microlevels has been demonstrated by analyzing the spectra of photoluminescence and absorption of the diamonds obtained.
引用
收藏
页码:585 / 589
页数:5
相关论文
共 26 条
  • [1] Aharonovich I, 2011, NAT PHOTONICS, V5, P397, DOI [10.1038/NPHOTON.2011.54, 10.1038/nphoton.2011.54]
  • [2] Silicon incorporation in CVD diamond layers
    Barjon, J
    Rzepka, E
    Jomard, F
    Laroche, JM
    Ballutaud, D
    Kociniewski, T
    Chevallier, J
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (11): : 2177 - 2181
  • [3] MICROPHOTOLUMINESCENCE AND RAMAN-SCATTERING STUDY OF DEFECT FORMATION IN DIAMOND FILMS
    BERGMAN, L
    STONER, BR
    TURNER, KF
    GLASS, JT
    NEMANICH, RJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) : 3951 - 3957
  • [4] Occurrence of the Si-V defect center in natural colorless gem diamonds
    Breeding, Christopher A.
    Wang, Wuyi
    [J]. DIAMOND AND RELATED MATERIALS, 2008, 17 (7-10) : 1335 - 1344
  • [5] Strong Narrow-Band Luminescence from Silicon-Vacancy Color Centers in Spatially Localized Sub-10 nm Nanodiamond
    Catledge, Shane A.
    Singh, Sonal
    [J]. ADVANCED SCIENCE LETTERS, 2011, 4 (02) : 512 - 515
  • [6] Nanometer-sized diamond particle as a probe for biolabeling
    Chao, Jui-I.
    Perevedentseva, Elena
    Chung, Pei-Hua
    Liu, Kuang-Kai
    Cheng, Chih-Yuan
    Chang, Chia-Ching
    Cheng, Chia-Liang
    [J]. BIOPHYSICAL JOURNAL, 2007, 93 (06) : 2199 - 2208
  • [7] SILICON DEFECTS IN DIAMOND
    CLARK, CD
    KANDA, H
    KIFLAWI, I
    SITTAS, G
    [J]. PHYSICAL REVIEW B, 1995, 51 (23): : 16681 - 16688
  • [8] EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment
    D'Haenens-Johansson, U. F. S.
    Edmonds, A. M.
    Newton, M. E.
    Goss, J. P.
    Briddon, P. R.
    Baker, J. M.
    Martineau, P. M.
    Khan, R. U. A.
    Twitchen, D. J.
    Williams, S. D.
    [J]. PHYSICAL REVIEW B, 2010, 82 (15)
  • [9] Davydov VA, 2014, NANOSYST-PHYS CHEM M, V5, P167
  • [10] Conversion of polycyclic aromatic hydrocarbons to graphite and diamond at high pressures
    Davydov, VA
    Rakhmanina, AV
    Agafonov, V
    Narymbetov, B
    Boudou, JP
    Szwarc, H
    [J]. CARBON, 2004, 42 (02) : 261 - 269