Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

被引：71

作者：

Zanoni, Enrico ^{[1
]}

Danesin, Francesca ^{[1
]}

Meneghini, Matteo ^{[1
]}

Cetronio, Antonio ^{[2
]}

Lanzieri, Claudio ^{[2
]}

Peroni, Marco ^{[2
]}

Meneghesso, Gaudenzio ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] SELEX Sistemi Integrati, I-00131 Rome, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 05期

关键词：

Current collapse; electroluminescence (EL); failure mechanism; GaN; high-electron-mobility transistor (HEMT); reverse-bias; GAN; DEGRADATION; MECHANISMS;

D O I：

10.1109/LED.2009.2016440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reverse-bias testing in AlGaN/GaN HEMTs at high (negative) gate voltage is found to induce a catastrophic increase in gate leakage current I-G, with only a slight degradation of drain current I-D. Electroluminescence (EL) microscopy demonstrates that leakage current injection is localized within "hot spots" at the gate edges, possibly corresponding to defects in the semiconductor material or at the metal-semiconductor interface. The density of "hot spots" increases during tests and is correlated with the increase of I-G and electroluminescence intensity and with an enhancement of trapping effects such as current collapse.

引用

页码：427 / 429

页数：3

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