Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V2Se9 chain structures

被引:5
作者
Lee, Weon-Gyu [1 ]
Sung, Dongchul [1 ]
Lee, Junho [1 ]
Chung, You Kyoung [1 ]
Kim, Bum Jun [2 ]
Choi, Kyung Hwan [2 ]
Lee, Sang Hoon [3 ]
Jeong, Byung Joo [3 ]
Choi, Jae-Young [2 ,3 ]
Huh, Joonsuk [1 ,2 ]
机构
[1] Sungkyunkwan Univ, Dept Chem, Suwon 16419, South Korea
[2] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
基金
新加坡国家研究基金会;
关键词
V2Se9; anisotropic 2D materials; band structure; density functional theory; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; TOPOLOGICAL INSULATOR; CRYSTAL-STRUCTURE; NANOWIRES; SEMICONDUCTOR; TRANSITION; DENSITY; NB2SE9; EXFOLIATION;
D O I
10.1088/1361-6528/abc6de
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
True one-dimensional (1D) van der Waals materials can form two-dimensional (2D) dangling-bond-free anisotropic surfaces. Dangling bonds on surfaces act as defects for transporting charge carriers. In this study, we consider true 1D materials to be V2Se9 chains, and then the electronic structures of 2D sheets composed of true 1D V2Se9 chains are calculated. The (010) plane has indirect bandgap with 0.757 eV (1.768 eV), while the (111x305;) plane shows a nearly direct bandgap of 1.047 eV (2.118 eV) for DFT-D3 (HSE06) correction, respectively. The (111x305;) plane of V2Se9 is expected to be used in optoelectronic devices because it contains a nearly direct bandgap. Partial charge analysis indicates that the (010) plane exhibits interchain interaction is stronger than the (111x305;) plane. To investigate the strain effect, we increased the interchain distance of planes until an indirect-to-direct bandgap transition occurred. The (010) plane then demonstrated a direct bandgap when interchain distance increased by 30%, while the (111x305;) plane demonstrated a direct bandgap when the interchain distance increased by 10%. In mechanical sensors, this change in the bandgap was induced by the interchain distance.
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页数:8
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共 77 条
  • [1] Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors
    Amani, Matin
    Tan, Chaoliang
    Zhang, George
    Zhao, Chunsong
    Bullock, James
    Song, Xiaohui
    Kim, Hyungjin
    Shrestha, Vivek Raj
    Gao, Yang
    Crozier, Kenneth B.
    Scott, Mary
    Javey, Ali
    [J]. ACS NANO, 2018, 12 (07) : 7253 - 7263
  • [2] Autès G, 2016, NAT MATER, V15, P154, DOI [10.1038/NMAT4488, 10.1038/nmat4488]
  • [3] Carbon-based electronics
    Avouris, Phaedon
    Chen, Zhihong
    Perebeinos, Vasili
    [J]. NATURE NANOTECHNOLOGY, 2007, 2 (10) : 605 - 615
  • [4] Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure
    Ceballos, Frank
    Bellus, Matthew Z.
    Chiu, Hsin-Ying
    Zhao, Hui
    [J]. NANOSCALE, 2015, 7 (41) : 17523 - 17528
  • [5] Isolation of Nb2Se9 Molecular Chain from Bulk One-Dimensional Crystal by Liquid Exfoliation
    Chae, Sudong
    Siddiqa, Akhtar J.
    Oh, Seungbae
    Kim, Bum Jun
    Choi, Kyung Hwan
    Jang, Woo-Sung
    Kim, Young-Min
    Yu, Hak Ki
    Choi, Jae-Young
    [J]. NANOMATERIALS, 2018, 8 (10):
  • [6] Isolation of inorganic molecular chains from rod-like bulk V2Se9 crystal by liquid exfoliation
    Chae, Sudong
    Siddiqa, Akhtar J.
    Kim, Bum Jun
    Oh, Seungbae
    Choi, Kyung Hwan
    Lee, Keun Ho
    Kim, Hyo Yeol
    Yu, Hak Ki
    Choi, Jae-Young
    [J]. RSC ADVANCES, 2018, 8 (62): : 35348 - 35352
  • [7] Design of dispersant structures for preparing highly concentrated one-dimensional inorganic molecular chains from V2Se9 crystals
    Chae, Sudong
    Siddiqa, Akhtar J.
    Kim, Bum Jun
    Oh, Seungbae
    Choi, Kyung Hwan
    Kim, Hyo Yeol
    Lee, Keun Ho
    Yu, Hak Ki
    Choi, Jae-Young
    [J]. CHEMICAL COMMUNICATIONS, 2018, 54 (86) : 12190 - 12193
  • [8] CsBi4Te6:: A high-performance thermoelectric material for low-temperature applications
    Chung, DY
    Hogan, T
    Brazis, P
    Rocci-Lane, M
    Kannewurf, C
    Bastea, M
    Uher, C
    Kanatzidis, MG
    [J]. SCIENCE, 2000, 287 (5455) : 1024 - 1027
  • [9] Group IVB transition metal trichalcogenides: a new class of 2D layered materials beyond graphene
    Dai, Jun
    Li, Ming
    Zeng, Xiao Cheng
    [J]. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE, 2016, 6 (02) : 211 - 222
  • [10] Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility
    Dai, Jun
    Zeng, Xiao Cheng
    [J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2015, 54 (26) : 7572 - 7576