Full-color thin film ZnGa2O4 phosphors by ion implantation

Full-color cathodoluminescence (CL) characteristics of ion implanted ZnGa2O4 thin film phosphors deposited by rf sputtering have been investigated. High brightness red (R) and green (G) CL was obtained from Eu and Mn-implanted ions, respectively Blue (B) emission has been achieved by Ce ion implantation or from high temperature annealed, self-activated films. RGB emissions of ion implanted ZnGa2O4 thin film phosphors are well. saturated and enclose a larger area surrounding the central ''white'' zone of CIE chromaticity chart than standard CRT phosphors. Luminescence efficiency enhancements of up to 40% have been achieved through surface texturing of the substrate prior to phosphor deposition. First demonstration of bright luminescence in ion implanted ZnGa2O4 films on flexible polyimide substrates is reported.