The utilization of low-temperature evaporable CsN3-doped NBphen as an alternative and efficient electron-injection layer in OLED

被引：4
作者：
Chu, Xin Bo [1 ]
Guan, Min [1 ]
Niu, Li Tao [1 ]
Zhang, Yang [1 ]
Li, Yi Yang [1 ]
Liu, Xing Fang [1 ]
Zeng, Yi Ping [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 07期
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
cesium azide; electron injection; low-temperature evaporation; n-type doping; organic light-emitting diodes; LIGHT-EMITTING-DIODES; DEVICES;
D O I：
10.1002/pssa.201431090
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cesium azide (CsN3) doped 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (NBphen) has been demonstrated as an efficient electron-injection layer (EIL) in this work. Advantageous for its low evaporation temperature and air stability, CsN3 is employed as an n-dopant to replace the reactive alkali metals or alkali metal compounds. Organic light-emitting diodes utilizing this composite EIL exhibit highly improved current density-luminance-voltage characteristics compared to the control device with LiF. When C545T-doped Alq(3) is used as an emitting layer, a maximum current efficiency of 10.4 cd A(-1) can be reached. Our results indicate that this CsN3-doped NBphen composite layer has great potential as an alternative EIL in organic electronic devices. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1605 / 1609
页数：5
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